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| DGS 4-025A DGSK 8-025A DGS 3-025AS Gallium Arsenide Schottky Rectifier IFAV = 5.4 A VRRM = 250 V CJunction = 6.4 pF Type Marking on product Circuit Package A = Anode, C = Cathode , TAB = Cathode A C DGS 3-025AS 3A250AS Single A C TO-252 AA A A C (TAB) DGS 4-025A DGS 4-025A Single TO-220 AC C A C (TAB) DGSK 8-025A DGSK 8-025A Common cathode A C A TO-220 AB A C A C (TAB) Symbol VRRM/RSM IFAV IFAV IFSM TVJ Tstg Ptot Md Conditions Maximum Ratings 250 V A A A C C W Nm Features * Low forward voltage * Very high switching speed * Low junction capacity of GaAs - low reverse current peak at turn off * Soft turn off * Temperature independent switching behaviour * High temperature operation capability * Epoxy meets UL 94V-0 TC = 25C; DC TC = 90C; DC TVJ = 45C; tp = 10 ms (50 Hz), sine 5.4 3.9 10 -55...+175 -55...+150 TC = 25C mounting torque (TO-220) 18 0.4...0.6 Applications * MHz switched mode power supplies (SMPs) * Small size SMPs * High frequency converters * Resonant converters Symbol IR VF CJ RthJC RthCH Weight Pulse test: Conditions TVJ = 25C VR = VRRM TVJ = 125C VR = VRRM IF = 2 A; IF = 2 A; TVJ = 125C TVJ = 25C Characteristic Values typ. max. 0.7 0.7 1.3 1.3 6.4 8.5 1.6 mA mA V V pF K/W K/W g g VR = 100 V; TVJ = 125C TO-220 TO-252 TO-220 Pulse Width = 5 ms, Duty Cycle < 2.0 % 0.5 0.3 2 Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, test conditions and dimensions (c) 2004 IXYS All rights reserved 1-2 435 DGS 4-025A DGSK 8-025A 10 100 pF A 1 DGS 3-025AS Outline TO-220 IF CJ TVJ = 125C 0,1 TVJ = 125C 25C 10 0,01 0,001 0,0 0,5 1,0 1,5 VF V 2,0 1 0,1 1 10 100 V 1000 VR Dim. A B C D E F G H J K M N Q R Millimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.38 0.56 2.29 2.79 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.015 0.022 0.090 0.110 Fig. 1 typ. forward characteristics Fig. 2 typ. junction capacity versus blocking voltage 10 K/W 1 ZthJC Single Pulse 0,1 Outlines TO-252 0,01 DGS3-025AS 0,00001 0,0001 0,001 0,01 0,1 1 t s 10 Fig. 3 typ. thermal impedance junction to case 1 Anode 2 NC 3 Anode 4 Cathode Note: explanatory comparison of the basic operational behaviour of rectifier diodes and Gallium Arsenide Schottky diodes: Dim. A A1 A2 b b1 b2 c c1 D D1 E E1 e e1 H L L1 L2 L3 conduction forward characteristics turn off characteristics turn on characteristics Rectifier Diode by majority + minority carriers VF (IF) extraction of excess carriers causes temperature dependant reverse recovery (trr, IRM, Qrr) delayed saturation leads to VFR GaAs Schottky Diode by majority carriers only VF (IF), see Fig. 1 reverse current charges junction capacity CJ, see Fig. 2; not temperature dependant no turn on overvoltage peak Millimeter Min. Max. 2.19 2.38 0.89 1.14 0 0.13 0.64 0.89 0.76 1.14 5.21 5.46 0.46 0.58 0.46 0.58 5.97 6.22 4.32 5.21 6.35 6.73 4.32 5.21 2.28 BSC 4.57 BSC 9.40 10.42 0.51 1.02 0.64 0.89 2.54 1.02 1.27 2.92 Inches Min. Max. 0.086 0.094 0.035 0.045 0 0.005 0.025 0.035 0.030 0.045 0.205 0.215 0.018 0.023 0.018 0.023 0.235 0.245 0.170 0.205 0.250 0.265 0.170 0.205 0.090 BSC 0.180 BSC 0.370 0.410 0.020 0.040 435 IXYS reserves the right to change limits, test conditions and dimensions 0.025 0.035 0.100 0.040 0.050 0.115 (c) 2004 IXYS All rights reserved 2-2 |
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